The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2022

Filed:

Jan. 14, 2020
Applicant:

Analog Devices International Unlimited Company, Limerick, IE;

Inventors:

Mark Cope, Bath, GB;

Patrick Joseph Pratt, Mallow, IE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/19 (2006.01); H01L 21/28 (2006.01); H03G 3/30 (2006.01);
U.S. Cl.
CPC ...
H03F 3/19 (2013.01); H01L 29/40117 (2019.08); H03G 3/3047 (2013.01);
Abstract

The disclosed technology relates generally to semiconductor devices, and more particularly to power semiconductor devices in which effects of charge trapping are compensated. A radio frequency (RF) power transmitter system comprises a RF power semiconductor device that outputs a time-varying gain characteristic from a RF signal input waveform originating from a digital input, wherein the time-varying gain characteristic includes a gain error associated with charge-trapping events having a memory effect on the RF power semiconductor device lasting longer than 1 microsecond. The RF power transmitter system further comprises circuitry configured to apply an analog gate bias waveform to the RF power semiconductor device based on the time-varying gain characteristic to reduce the gain error.


Find Patent Forward Citations

Loading…