The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2022

Filed:

Feb. 22, 2019
Applicants:

Fujikura Ltd., Tokyo, JP;

Optoenegy Inc., Chiba, JP;

Inventors:

Rintaro Morohashi, Chiba, JP;

Ryozaburo Nogawa, Chiba, JP;

Tomoaki Koui, Chiba, JP;

Yumi Yamada, Chiba, JP;

Assignees:

FUJIKURA LTD., Tokyo, JP;

OPTOENEGY Inc., Chiba, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/30 (2006.01); H01S 5/343 (2006.01); H01S 5/20 (2006.01); H01S 5/22 (2006.01);
U.S. Cl.
CPC ...
H01S 5/3054 (2013.01); H01S 5/2004 (2013.01); H01S 5/3063 (2013.01); H01S 5/3077 (2013.01); H01S 5/343 (2013.01); H01S 5/2206 (2013.01); H01S 2304/04 (2013.01);
Abstract

A semiconductor optical element includes: a first conductivity type semiconductor substrate; and a laminated body disposed on the first conductivity type semiconductor substrate. The laminated body includes, in the following order from a side of the first conductivity type semiconductor substrate: a first conductivity type semiconductor layer; an active layer; a second conductivity type semiconductor layer; and a second conductivity type contact layer. The second conductivity type semiconductor layer includes: a carbon-doped semiconductor layer in which carbon is doped as a dopant in a compound semiconductor; and a group 2 element-doped semiconductor layer in which a group 2 element is doped as a dopant in a compound semiconductor. The carbon-doped semiconductor layer is disposed at a position closer to the active layer than the group 2 element-doped semiconductor layer.


Find Patent Forward Citations

Loading…