The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2022

Filed:

Feb. 25, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jeonghee Park, Hwaseong-si, KR;

Kwangmin Park, Seoul, KR;

Jiho Park, Suwon-si, KR;

Gyuhwan Oh, Hwaseong-si, KR;

Jungmoo Lee, Hwaseong-si, KR;

Hideki Horii, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); H01L 27/24 (2013.01); H01L 45/06 (2013.01); H01L 45/141 (2013.01); H01L 45/1675 (2013.01); H01L 45/1683 (2013.01); H01L 45/1691 (2013.01);
Abstract

A semiconductor device includes a base structure comprising a semiconductor substrate, a first conductive structure disposed on the base structure, and extending in a first direction, the first conductive structure including lower layers, and at least one among the lower layers including carbon, and a data storage pattern disposed on the first conductive structure. The semiconductor device further includes an intermediate conductive pattern disposed on the data storage pattern, and including intermediate layers, at least one among the intermediate layers including carbon, a switching pattern disposed on the intermediate conductive pattern, and a switching upper electrode pattern disposed on the switching pattern, and including carbon. The semiconductor device further includes a second conductive structure disposed on the switching upper electrode pattern, and extending in a second direction intersecting the first direction, and a hole spacer disposed on a side surface of the data storage pattern.


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