The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2022

Filed:

Jun. 23, 2021
Applicants:

Naftali Paul Eisenberg, Jerusalem, IL;

Lev Kreinin, Bnei-Brak, IL;

Inventors:

Naftali Paul Eisenberg, Jerusalem, IL;

Lev Kreinin, Bnei-Brak, IL;

Assignee:

SOLAROUND LTD., Jerusalem, IL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0216 (2014.01); H01L 31/068 (2012.01); H01L 21/225 (2006.01); H01L 31/0288 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1804 (2013.01); H01L 21/2254 (2013.01); H01L 21/2255 (2013.01); H01L 31/0288 (2013.01); H01L 31/02167 (2013.01); H01L 31/02168 (2013.01); H01L 31/0684 (2013.01); H01L 31/1868 (2013.01);
Abstract

The invention provides a bifacial photovoltaic cell comprising: a semiconductor substrate, the substrate comprising an n+ layer on a first surface, and a p+ layer on a second surface. The n+ layer comprises an n-dopant and the p+ layer comprises a p-dopant. The cell further comprises a passivating and/or antireflective coating on the doped first and second surfaces. The cell is characterized in that the second surface of the semiconductor substrate has an area substantially devoid of the p-dopant on an edge of the second surface having a width in the range of 0.1-0.5 mm; wherein the area is formed by etching the semiconductor substrate.


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