The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2022
Filed:
Apr. 22, 2019
Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, CN;
Jiaxin Li, Shenzhen, CN;
Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, CN;
Abstract
The present invention provides an amorphous silicon thin film transistor and a manufacturing method of the amorphous silicon thin film transistor, which comprise: a substrate, a gate electrode layer, a gate insulating layer, an active layer, a source/drain electrode layer, an N+-doped layer, a protective insulating layer, and a passivation layer. The N+-doped layer is disposed between the active layer and the source/drain electrode layer. The protective insulating layer is disposed on the source/drain electrode layer. A channel is formed in the source/drain electrode layer and penetrates the N+-doped layer and the protective insulating layer. The passivation layer covers the channel and the protective insulating layer. The protective insulating layer and the source/drain electrode layer are flush with each other in the channel.