The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2022
Filed:
Jul. 31, 2020
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Chih-Yen Chen, Tainan, TW;
Franky Juanda Lumbantoruan, Sumatera Utara, ID;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A semiconductor structure includes a seed layer on a substrate and an epitaxial stack on the seed layer. The epitaxial stack includes a first superlattice part and a second superlattice part on the first superlattice part. The first superlattice part includes first units repetitively stacked M1 times on the seed layer. Each first unit includes a first sub-layer that is an AlGaN layer, and a second sub-layer that is an AlGaN layer, wherein y1<x1. The second superlattice part includes second units repetitively stacked M2 times on the first superlattice part. Each second unit includes a third sub-layer that is an AlGaN layer, and a fourth sub-layer that is an AlGaN layer, wherein y2<x2. M1 and M2 are positive integers, 0≤x1, y1 and y2<1, 0<x2≤1, and x1<x2, or x1=x2 and y1<y2.