The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2022
Filed:
May. 08, 2020
Applicant:
Stmicroelectronics SA, Montrouge, FR;
Inventors:
Philippe Galy, Le Touvet, FR;
Louise De Conti, Grenoble, FR;
Assignee:
STMicroelectronics SA, Montrouge, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7394 (2013.01); H01L 29/0847 (2013.01); H01L 29/1033 (2013.01); H01L 29/42376 (2013.01);
Abstract
A BiMOS-type transistor includes a gate region, a channel under the gate region, a first channel contact region and a second channel contact region. The first channel contact region is electrically coupled to the gate region to receive a first potential. The second channel contact region is electrically coupled to receive a second potential.