The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2022

Filed:

Oct. 22, 2020
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventor:

Norikazu Sakai, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/49 (2006.01); H01L 29/66 (2006.01); H01L 29/51 (2006.01); H01L 29/739 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66992 (2013.01); H01L 29/51 (2013.01); H01L 29/7393 (2013.01); H01L 29/2003 (2013.01);
Abstract

An object of the present disclosure is to suppress a shrinkage cavity without affecting the layout or the insulation performance of the semiconductor element in a power semiconductor device. A power semiconductor device includes a heat radiation plate; an insulating substrate bonded in a bonding region on an upper surface of the heat radiation plate with a bonding material containing a plurality of elements having different solidification points; a semiconductor element mounted on an upper surface of the insulating substrate; and a bonding wire bonded in the bonding region on the upper surface of the heat radiation plate such that the bonding wire surrounds the semiconductor element in plan view.


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