The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2022

Filed:

Feb. 26, 2019
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Shunpei Yamazaki, Setagaya, JP;

Masahiro Takahashi, Atsugi, JP;

Tomoki Hiramatsu, Koto, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 29/04 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4908 (2013.01); H01L 21/02609 (2013.01); H01L 29/045 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01);
Abstract

A stack with excellent electrical characteristics and reliability is provided. The stack includes an insulator, a conductor, and a first oxide between the insulator and the conductor; the first oxide includes a first c-axis-aligned crystal region; and a c-axis of the first crystal region is substantially perpendicular to a plane of the first oxide on the insulator side. Alternatively, the stack includes an insulator, a conductor, a first oxide between the insulator and the conductor, and a second oxide facing the first oxide with the insulator therebetween; the first oxide includes a first c-axis-aligned crystal region; a c-axis of the first crystal region is substantially perpendicular to a plane of the first oxide on the insulator side; the second oxide includes a second c-axis-aligned crystal region; and a c-axis of the second crystal region is substantially perpendicular to a plane of the second oxide on the insulator side.


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