The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2022
Filed:
Jun. 27, 2018
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Tasuku Sumino, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/40 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/401 (2013.01); H01L 21/308 (2013.01); H01L 21/3086 (2013.01); H01L 21/30604 (2013.01); H01L 29/42376 (2013.01);
Abstract
A resist () is applied on a semiconductor substrate () and a first opening () and a second opening () whose width is narrower than that of the first opening () are formed at the resist (). The semiconductor substrate () is wet-etched using the resist () as a mask to form one continuous recess () below the first opening () and the second opening (). After forming the recess (), a shrink material () is cross-linked with the resist () to block the second opening () without blocking the first opening (). After blocking the second opening (), a gate electrode () is formed within the recess () via the first opening ().