The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2022
Filed:
Oct. 07, 2020
Applicant:
Denso Corporation, Kariya, JP;
Inventors:
Kentarou Okumura, Kariya, JP;
Hidekazu Odake, Kariya, JP;
Hajime Tsukahara, Toyota, JP;
Yukihiko Watanabe, Nagakute, JP;
Assignee:
DENSO CORPORATION, Kariya, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 29/66712 (2013.01); H01L 29/7802 (2013.01);
Abstract
A silicon carbide semiconductor device includes: a silicon carbide semiconductor substrate that has a front surface and a rear surface; and a plurality of ohmic electrodes that are in ohmic contact with a surface of silicon carbide on at least one of the front surface and the rear surface of the silicon carbide semiconductor substrate. The plurality of ohmic electrodes are scattered on the surface of the silicon carbide to provide a concavity and convexity. The concavity and convexity has a height due to the ohmic electrodes less than 1.0 μm.