Semiconductor device and method of manufacturing a semiconductor device

Abstract

A semiconductor device having an active region and a voltage withstand region comprises a first semiconductor layer of a first conductive type, a second semiconductor region of a second conductive type, disposed selectively on the front side of the first semiconductor layer, a plurality of first trench contact (TC) sections disposed at a peripheral section of the active region in the second semiconductor region, being apart from one another and extending in a first direction, a second trench contact (TC) disposed at the peripheral section of the active region in the second semiconductor region, extending in the first direction and being further from the voltage withstand region than the plurality of first trench contact sections, an electric conductor layer electrically connecting together the plurality of first TC sections, and a conductive connection region disposed between the first TC sections and second TC section, having a lower resistivity than the second semiconductor region, and electrically connecting the first TC sections and second TC section.