The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2022

Filed:

Dec. 11, 2017
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Feng Zhang, Beijing, CN;

Zhijun Lv, Beijing, CN;

Wenqu Liu, Beijing, CN;

Liwen Dong, Beijing, CN;

Shizheng Zhang, Beijing, CN;

Ning Dang, Beijing, CN;

Zhiyong Liu, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3276 (2013.01); H01L 27/3246 (2013.01); H01L 29/7869 (2013.01); H01L 29/78675 (2013.01); H01L 29/78678 (2013.01); H01L 2227/323 (2013.01);
Abstract

The present application discloses an array substrate having a plurality of first thin film transistors and a plurality of second thin film transistors. Each of the plurality of first thin film transistors includes a silicon active layer. The array substrate includes a base substrate; a silicon layer having a plurality of silicon active layers respectively for the plurality of first thin film transistors; and a UV absorption layer on a side of the silicon layer distal to the base substrate, and including a plurality of UV absorption blocks. Each of the plurality of UV absorption blocks is on a side of the one of the plurality of silicon active layers distal to the base substrate, and is insulated from the one of the plurality of silicon active layers.


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