The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2022

Filed:

Aug. 04, 2020
Applicant:

Bolb Inc., San Jose, CA (US);

Inventors:

Jianping Zhang, San Jose, CA (US);

Ling Zhou, San Jose, CA (US);

Alexander Lunev, San Jose, CA (US);

Ying Gao, San Jose, CA (US);

Assignee:

BOLB INC., Livermore, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01);
U.S. Cl.
CPC ...
H01L 27/156 (2013.01);
Abstract

A high-power light-emitting diode is made by monolithically integrating multiple miniature light-emitting chips for improved operation voltage, light extraction efficiency and device yield. The light emitting diode includes a plurality of monolithically integrated mini chips, each of the mini chips has a mini n-contact formed on an n-type structure, a mini p-ohmic contact formed on a p-type structure, and a mini light emitting area defined by the mini p-ohmic contact. An n-bridge metal electrically connecting the mini n-contact of the mini chips to an n-bonding pad, the n-bridge metal is formed on the p-type structure and on sidewall of an opening in the p-type structure and on the active-region.


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