The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2022
Filed:
Dec. 17, 2019
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Scott Robert Summerfelt, Garland, TX (US);
Hassan Omar Ali, Murphy, TX (US);
Benjamin Stassen Cook, Los Gatos, CA (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1462 (2013.01); H01L 27/14618 (2013.01); H01L 27/14627 (2013.01); H01L 27/14629 (2013.01); H01L 27/14636 (2013.01); H01L 27/14685 (2013.01);
Abstract
In described examples an integrated circuit (IC) has multiple layers of dielectric material overlying at least a portion of a surface of a substrate. A trench is etched through the layers of dielectric material to expose a portion the substrate to form a trench floor, the trench being surrounded by a trench wall formed by the layers of dielectric material. A metal perimeter band surrounds the trench adjacent the trench wall, the perimeter band being embedded in one of the layers of the dielectric material.