The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2022
Filed:
Nov. 08, 2019
Applicant:
Seiko Epson Corporation, Tokyo, JP;
Inventor:
Satoshi Ito, Eniwa, JP;
Assignee:
SEIKO EPSON CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 27/12 (2006.01); G02F 1/1368 (2006.01); G02F 1/1362 (2006.01); G02F 1/1335 (2006.01); G03B 21/00 (2006.01); H01L 29/786 (2006.01); G03B 33/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1218 (2013.01); G02F 1/1368 (2013.01); G02F 1/133526 (2013.01); G02F 1/136209 (2013.01); G03B 21/006 (2013.01); H01L 27/1222 (2013.01); G02F 1/13685 (2021.01); G02F 2202/104 (2013.01); G03B 33/12 (2013.01); H01L 29/78675 (2013.01);
Abstract
An element substrate serving as a substrate for an electro-optical device includes a base material, a TFT disposed on the base material, the TFT including a semiconductor layer, and a first insulating film including a silicon oxide film disposed between the base material and the semiconductor layer, wherein a content of hydrogen in the silicon oxide film is 1.0×10atoms/cmor more but less than 1.0×10atoms/cm.