The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2022

Filed:

Dec. 12, 2018
Applicant:

Imec Vzw, Leuven, BE;

Inventor:

Antonio Arreghini, Kessel-Lo, BE;

Assignee:

IMEC vzw, Leuven, BE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/11556 (2017.01); H01L 29/788 (2006.01); H01L 29/786 (2006.01); H01L 29/792 (2006.01); H01L 21/768 (2006.01); H01L 27/1159 (2017.01); H01L 27/11597 (2017.01); H01L 27/11524 (2017.01); H01L 27/1157 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/76865 (2013.01); H01L 21/76877 (2013.01); H01L 27/1157 (2013.01); H01L 27/1159 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 27/11597 (2013.01); H01L 29/7889 (2013.01); H01L 29/78642 (2013.01); H01L 29/78696 (2013.01); H01L 29/7926 (2013.01);
Abstract

The disclosed technology generally relates to semiconductor devices, and more particularly to three-dimensional semiconductor devices. In one aspect, a method of manufacturing a three-dimensional (3D) semiconductor device includes providing a horizontal layer structure above a substrate and forming an opening that extends vertically through the horizontal layer structure to the substrate. The method additionally includes lining an inside vertical surface of the opening with a gate stack and lining the inside vertical surface of the opening having the gate stack formed thereon with a sacrificial material layer. The method additionally includes filling the opening with a filling material and removing the sacrificial material layer to form a recess. The method further includes forming the channel by epitaxially growing, in the recess, a channel material upwards from the substrate.


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