The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2022
Filed:
Sep. 11, 2020
Mitsubishi Electric Corporation, Tokyo, JP;
Kazuhiro Shimizu, Tokyo, JP;
Yuji Kawasaki, Tokyo, JP;
Toshihiro Imasaka, Tokyo, JP;
Manabu Yoshino, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
The semiconductor device that supplies a charging current to a bootstrap capacitor includes a semiconductor layer, an N-type diffusion region, an N-type diffusion region, a P-type diffusion region, a P-type diffusion region, an N-type diffusion region, a source electrode, a drain electrode, a back gate electrode, and a gate electrode. The N-type diffusion region and the N-type diffusion region are electrically connected to a first electrode of the bootstrap capacitor. The N-type diffusion region is supplied with a power supply voltage. The source electrode is connected to the N-type diffusion region and is supplied with the power supply voltage. The back gate electrode is connected to a region separated from the N-type diffusion region and is grounded. The breakdown voltage between the source electrode and the back gate electrode is greater than the power supply voltage.