The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2022

Filed:

Nov. 08, 2018
Applicant:

Industrial Technology Research Institute, Hsinchu, TW;

Inventors:

Cheng-Hung Yu, Taoyuan, TW;

Tai-Jui Wang, Kaohsiung, TW;

Chieh-Wei Feng, Taoyuan, TW;

Yu-Hua Chung, Pingtung County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H02H 9/04 (2006.01); H01L 23/538 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0248 (2013.01); H01L 23/5383 (2013.01); H01L 23/5384 (2013.01); H01L 23/5386 (2013.01); H02H 9/046 (2013.01); H01L 27/12 (2013.01); H01L 27/124 (2013.01);
Abstract

A system in package structure and an electrostatic discharge protection structure thereof are provided. The electrostatic discharge protection structure includes a redistribution layer and a first transistor array. The redistribution layer has a first electrode and a second electrode. The first transistor array is coupled to a pin end of at least one integrated circuit, the first electrode and the second electrode. The first transistor array has a plurality of transistors. A plurality of first transistors of the transistors are coupled in parallel, and a plurality of second transistors of the transistors are coupled in parallel. The first transistors and the second transistors are configured to be turned on for dissipating an electrostatic discharge current.


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