The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2022
Filed:
Nov. 13, 2020
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Sheng-Fu Huang, New Taipei, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 21/48 (2006.01);
U.S. Cl.
CPC ...
H01L 24/27 (2013.01); H01L 21/4814 (2013.01); H01L 23/481 (2013.01); H01L 24/83 (2013.01); H01L 2224/2747 (2013.01);
Abstract
A method for fabricating a semiconductor device includes: forming a first bonding layer on a first wafer and an etching mask on the first bonding layer; etching an edge portion of the first bonding layer by using the etching mask, such that a portion of the first wafer is exposed; removing the etching mask; and bonding a second wafer to the first bonding layer.
Huang, Sheng-Fu. (2022). Method for fabricating semiconductor device including etching an edge portion of a bonding layer by using an etching mask (U.S. Patent No. 11387207). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11387207
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile