The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2022

Filed:

Nov. 08, 2019
Applicant:

Qorvo Us, Inc., Greensboro, NC (US);

Inventors:

Julio C. Costa, Oak Ridge, NC (US);

Michael Carroll, Jamestown, NC (US);

Philip W. Mason, Greensboro, NC (US);

Merrill Albert Hatcher, Jr., Greensboro, NC (US);

Assignee:

QORVO US, INC., Greensboro, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 21/00 (2006.01); H01L 23/31 (2006.01); H01L 23/29 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3128 (2013.01); H01L 21/561 (2013.01); H01L 23/291 (2013.01); H01L 23/3114 (2013.01); H01L 23/3135 (2013.01); H01L 23/3171 (2013.01); H01L 23/49805 (2013.01); H01L 24/05 (2013.01); H01L 21/6835 (2013.01); H01L 2224/0231 (2013.01); H01L 2224/02373 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/1203 (2013.01); H01L 2924/1205 (2013.01); H01L 2924/1206 (2013.01); H01L 2924/1207 (2013.01); H01L 2924/1306 (2013.01);
Abstract

The present disclosure relates to a radio frequency device that includes a mold device die and a multilayer redistribution structure underneath the mold device die. The mold device die includes a device region with a back-end-of-line (BEOL) portion and a front-end-of-line (FEOL) portion over the BEOL portion, a barrier layer, and a first mold compound. The FEOL portion includes isolation sections and an active layer surrounded by the isolation sections. The barrier layer formed of silicon nitride resides over the active layer and top surfaces of the isolation sections. The first mold compound resides over the barrier layer. Herein, silicon crystal does not exist between the first mold compound and the active layer. The multilayer redistribution structure includes a number of bump structures, which are at a bottom of the multilayer redistribution structure and electrically coupled to the FEOL portion of the mold device die.


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