The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2022

Filed:

Jun. 20, 2019
Applicant:

Hitachi High-tech Corporation, Tokyo, JP;

Inventor:

Yasushi Sonoda, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30655 (2013.01); H01J 37/321 (2013.01); H01J 37/32009 (2013.01); H01J 37/32174 (2013.01); H01J 37/32715 (2013.01); H01L 21/67069 (2013.01); H01J 2237/3343 (2013.01);
Abstract

A plasma processing apparatus, including a processing; a first radio frequency power source; a sample stage on which the sample is placed; a second radio frequency power; and a control device configured to control, when the second radio frequency power source is controlled based on a change in a plasma impedance, which is generated when a first gas that is a gas for a first step is switched to a second gas that is a gas for a second step, such that the second radio frequency power is changed from a value of the second radio frequency power in the first step to a value of the second radio frequency power in the second step, and a supply time of the first gas such that a supply time of the second radio frequency power in the first step is substantially equal to a time of the first step.


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