The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2022
Filed:
Apr. 30, 2020
Applicant:
U.s. Government As Represented BY the Secretary of the Army, Dover, NJ (US);
Inventors:
Jeffrey Warrender, Averill Park, NY (US);
Quentin Hudspeth, Clifton Park, NY (US);
Assignee:
The United States of America as Represented by the Secretary of the Army, Washington, DC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/205 (2006.01); H01L 21/02 (2006.01); D01F 9/08 (2006.01); C23C 14/06 (2006.01); C23C 14/28 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02653 (2013.01); C23C 14/06 (2013.01); C23C 14/28 (2013.01); D01F 9/08 (2013.01); H01L 21/02381 (2013.01); H01L 21/02603 (2013.01); D10B 2101/20 (2013.01);
Abstract
Semiconductor nanofibers are produced at room temperature in a pressure vessel. A semiconductor wafer and metal catalyst are introduced into the pressure vessel. The pressure vessel is filled with a background gas. A nanofiber growth element is introduced into the pressure vessel. For example, the semiconductor may be ablated by a laser. The semiconductor is retained in the pressure vessel for a prolonged period of time until nanofiber growth appears.