The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2022

Filed:

Jul. 16, 2020
Applicant:

Qromis, Inc., Santa Clara, CA (US);

Inventors:

Vladimir Odnoblyudov, Danville, CA (US);

Cem Basceri, Los Gatos, CA (US);

Shari Farrens, Boise, ID (US);

Assignee:

QROMIS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/74 (2006.01); C30B 33/08 (2006.01); H01L 21/8252 (2006.01); H01L 23/535 (2006.01); H01L 29/20 (2006.01); C30B 29/06 (2006.01); C30B 29/40 (2006.01); C30B 29/68 (2006.01); C23C 16/24 (2006.01); C23C 16/34 (2006.01); C30B 25/18 (2006.01); C30B 33/06 (2006.01); C23C 16/30 (2006.01); H01L 29/778 (2006.01); H01L 29/80 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0242 (2013.01); C23C 16/24 (2013.01); C23C 16/303 (2013.01); C23C 16/345 (2013.01); C30B 25/18 (2013.01); C30B 29/06 (2013.01); C30B 29/406 (2013.01); C30B 29/68 (2013.01); C30B 33/06 (2013.01); C30B 33/08 (2013.01); H01L 21/0245 (2013.01); H01L 21/0254 (2013.01); H01L 21/02428 (2013.01); H01L 21/02488 (2013.01); H01L 21/02491 (2013.01); H01L 21/02505 (2013.01); H01L 21/02532 (2013.01); H01L 21/743 (2013.01); H01L 21/8252 (2013.01); H01L 23/535 (2013.01); H01L 29/2003 (2013.01); H01L 21/76254 (2013.01); H01L 29/7783 (2013.01); H01L 29/802 (2013.01);
Abstract

A method of manufacturing a substrate includes forming a support structure by providing a polycrystalline ceramic core, encapsulating the polycrystalline ceramic core in a first adhesion shell, encapsulating the first adhesion shell in a conductive shell, encapsulating the conductive shell in a second adhesion shell, and encapsulating the second adhesion shell in a barrier shell. The method also includes joining a bonding layer to the support structure, joining a substantially single crystalline silicon layer to the bonding layer, forming an epitaxial silicon layer by epitaxial growth on the substantially single crystalline silicon layer, and forming one or more epitaxial layers by epitaxial growth on the epitaxial silicon layer.


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