The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2022

Filed:

Sep. 18, 2020
Applicant:

Kokusai Electric Corporation, Tokyo, JP;

Inventors:

Takeo Hanashima, Toyama, JP;

Hiroto Yamagishi, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/455 (2006.01); H01L 21/321 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02263 (2013.01); C23C 16/45527 (2013.01); H01L 21/02164 (2013.01); H01L 21/32105 (2013.01); H01L 21/67017 (2013.01); H01L 21/67253 (2013.01);
Abstract

There is provided a technique that includes: forming an initial oxide layer on a surface of a substrate by performing a set m times (where m is an integer equal to or greater than 1), the set including non-simultaneously performing: (a) oxidizing the surface of the substrate under a condition that an oxidation amount of the substrate increases from an upstream side to a downstream side of a gas flow by supplying an oxygen-containing gas and a hydrogen-containing gas to the substrate; and (b) oxidizing the surface of the substrate under a condition that the oxidation amount of the substrate decreases from the upstream side to the downstream side of the gas flow by supplying the oxygen-containing gas and the hydrogen-containing gas to the substrate; and forming a film on the initial oxide layer by supplying a precursor gas to the substrate.


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