The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2022

Filed:

Feb. 13, 2020
Applicant:

Astronics Advanced Electronic Systems Corp., Kirkland, WA (US);

Inventor:

Warren J. Wambsganss, Snoqualmie, WA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01F 27/38 (2006.01); H01F 27/24 (2006.01); H01F 27/42 (2006.01); H01F 27/06 (2006.01); H01F 27/28 (2006.01); H01F 30/06 (2006.01); H05K 1/16 (2006.01); H05K 1/18 (2006.01); H01F 3/14 (2006.01);
U.S. Cl.
CPC ...
H01F 27/38 (2013.01); H01F 3/14 (2013.01); H01F 27/06 (2013.01); H01F 27/24 (2013.01); H01F 27/2804 (2013.01); H01F 27/425 (2013.01); H01F 30/06 (2013.01); H05K 1/165 (2013.01); H05K 1/181 (2013.01); H01F 2027/065 (2013.01); H05K 2201/1003 (2013.01);
Abstract

An integrated transformer device is provided with both inductive and transformer elements. The inductive and transformer elements are combined within the same device, sharing at least a part of the same magnetic and electrical paths. The integrated transformer device comprises a top core, a bottom core, and a shunt core. A high voltage winding is wound around the bottom core. A low voltage winding is wound around the bottom core and the shunt core. Power semiconductor devices, connected in parallel, form a portion of the low voltage winding and are disposed at a location proximate to the high voltage winding.


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