The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2022

Filed:

Mar. 30, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Bilal Ahmad Janjua, Suwon-si, KR;

Sungwhan Seo, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01); G11C 16/30 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G05F 1/575 (2006.01);
U.S. Cl.
CPC ...
G11C 16/30 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G05F 1/575 (2013.01);
Abstract

A memory device including a memory cell area having a plurality of memory cells, and a peripheral circuit area including peripheral circuits configured to control the memory cells, the peripheral circuits connected to the memory cells by at least a portion of bit lines, word lines, and select lines may be provided. The peripheral circuits may include a reference voltage generator configured to output at least one reference voltage in response to control data of a control logic. The reference voltage generator may include a first resistor chain including first resistors connected in series between a first power node and a second power node, a second resistor chain including second resistors connected in series between the first power node and the second power node, and a plurality of decoders connected to the first resistor chain and the second resistor chain.


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