The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2022

Filed:

Oct. 20, 2020
Applicant:

Silicon Motion, Inc., Hsinchu County, TW;

Inventors:

Tsung-Chieh Yang, Hsinchu, TW;

Hsiao-Te Chang, Hsinchu County, TW;

Wen-Long Wang, Hsinchu, TW;

Assignee:

Silicon Motion, Inc., Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 11/56 (2006.01); G11C 16/26 (2006.01); G06F 3/06 (2006.01); G11C 16/08 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5642 (2013.01); G06F 3/0604 (2013.01); G06F 3/0622 (2013.01); G06F 3/0629 (2013.01); G06F 3/0638 (2013.01); G06F 3/0679 (2013.01); G11C 11/5628 (2013.01); G11C 16/08 (2013.01); G11C 16/26 (2013.01);
Abstract

A method for performing memory access of a Flash cell of a Flash memory includes: performing a first sensing operation corresponding to a first sensing voltage to generate a first digital value of the Flash cell; according to a result of the first sensing operation, performing a plurality of second sensing operations to generate a second digital value of the Flash cell representing at least one candidate threshold voltage of the Flash cell; determining the threshold voltage of the memory Flash cell according to the at least one candidate threshold voltage; determining soft information of a bit stored in the Flash cell according to the threshold voltage of the Flash cell; and using the soft information to perform soft decoding.


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