The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2022
Filed:
Apr. 21, 2020
Hefei Xinsheng Optoelectronics Technology Co., Ltd., Anhui, CN;
Boe Technology Group Co., Ltd., Beijing, CN;
Guangyao Li, Beijing, CN;
Dongfang Wang, Beijing, CN;
Jun Wang, Beijing, CN;
Haitao Wang, Beijing, CN;
Chaowei Hao, Beijing, CN;
Bo Feng, Beijing, CN;
Rong Liu, Beijing, CN;
Wei Cai, Beijing, CN;
Biao Luo, Beijing, CN;
Xuechao Sun, Beijing, CN;
Xuehai Gui, Beijing, CN;
Qibin Liang, Beijing, CN;
Yanfei Wan, Beijing, CN;
Jin Su, Beijing, CN;
HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., Anhui, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Abstract
A method of detecting threshold voltage shift and a threshold voltage shift detection device are provided. The method is applied to a pixel driving circuit which I is electrically coupled to a control line, a voltage line and a detection node, respectively. The method includes: in a detection cycle including a setting phase and a detection phase, in the setting phase, controlling a transistor included in the pixel driving circuit to be in a biased state; in the detection phase, providing a preset control voltage signal to the control line, providing a preset voltage signal to the voltage line, and determining a threshold voltage shift state of the transistor according to an electric potential of the detection node.