The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2022
Filed:
Mar. 06, 2019
International Business Machines Corporation, Armonk, NY (US);
Aakash Pushp, Santa Clara, CA (US);
Pritish Narayanan, San Jose, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A magnetic double tunnel junction (MDTJ) (which, preferably, has a large aspect ratio, wherein length L of the MDTJ>>width w of the MDTJ) has magnetic domain wall(s) or DW(s) in the free layer of the MDTJ, wherein controlled movement of the DW(s) across the free layer is effected in response to the polarity, magnitude, and duration of a voltage pulse across the MDTJ. The motion and relative position of DW(s) causes the conductance of the MDTJ (that is measured across the MDTJ) to change in a symmetric and linear fashion. By reversing the polarity of the bias voltage, the creation and/or direction of the DW(s) motion can be reversed, thereby allowing for a bi-directional response to the input pulse.