The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2022

Filed:

Mar. 16, 2020
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Keisuke Kimura, Tokyo, JP;

Hideyuki Tajima, Tokyo, JP;

Wataru Saito, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 19/165 (2006.01); G05F 3/26 (2006.01);
U.S. Cl.
CPC ...
G01R 19/16538 (2013.01); G05F 3/262 (2013.01);
Abstract

The present invention provides a current detection circuit, semiconductor device, and a semiconductor system suitable for improving a current sensing accuracy. According to one embodiment, the current detection circuitcomprises a sense transistor Trthrough which a first sense current proportional to the current flowing through the drive transistor MNflows, an operational amplifier AMPfor amplifying the potential difference of the voltage of the external output terminal OUT and the source voltage of the sense transistor Trfor outputting the first sense current, a transistor Trprovided in series with the sense transistor Trand to which the output voltage of the operational amplifier AMPis applied to the gate, and a switch SWprovided between the external output terminal OUT and the source of the sense transistor Trand turned on when the drive transistor MNis turned off.


Find Patent Forward Citations

Loading…