The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2022

Filed:

Mar. 20, 2019
Applicant:

Qorvo Us, Inc., Greensboro, NC (US);

Inventors:

Derya Deniz, McKinney, TX (US);

Robert Kraft, Plano, TX (US);

John Belsick, Bend, OR (US);

Assignee:

Qorvo US, Inc., Greensboro, NC (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/34 (2006.01); C23C 14/22 (2006.01); C23C 14/00 (2006.01); H03H 3/02 (2006.01); H03H 9/54 (2006.01); H03H 9/02 (2006.01);
U.S. Cl.
CPC ...
H03H 3/02 (2013.01); C23C 14/0036 (2013.01); C23C 14/226 (2013.01); H01J 37/3408 (2013.01); H01J 37/3447 (2013.01); H03H 9/02007 (2013.01); H03H 9/54 (2013.01);
Abstract

Bulk acoustic wave resonator structures include a bulk layer with inclined c-axis hexagonal crystal structure piezoelectric material supported by a substrate. The bulk layer may be prepared without first depositing a seed layer on the substrate. The bulk material layer has a c-axis tilt of about 32 degrees or greater. The bulk material layer may exhibit a ratio of shear coupling to longitudinal coupling of 1.25 or greater during excitation. A method for preparing a crystalline bulk layer having a c-axis tilt includes depositing a bulk material layer directly onto a substrate at an off-normal incidence. The deposition conditions may include a pressure of less than 5 mTorr and a deposition angle of about 35 degrees to about 85 degrees.


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