The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2022

Filed:

Jun. 03, 2021
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventor:

Jae-Hyun Han, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); G11C 13/00 (2006.01); H01L 27/24 (2006.01); G06N 3/063 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1206 (2013.01); G06N 3/063 (2013.01); G11C 13/004 (2013.01); G11C 13/0011 (2013.01); G11C 13/0069 (2013.01); H01L 27/2409 (2013.01); H01L 27/2463 (2013.01); H01L 45/085 (2013.01); H01L 45/1266 (2013.01); G11C 2013/005 (2013.01); G11C 2013/0045 (2013.01); G11C 2013/0071 (2013.01); G11C 2213/72 (2013.01);
Abstract

A semiconductor device including at least one variable resistance device is provided. A variable resistance element includes: an ion supply layer having a top, a bottom and a sidewall connecting the top to the bottom; an ion-receiving layer having an inner sidewall connected to at least a portion of the sidewall of the ion supply layer; a gate pattern connected to an outer sidewall of the ion-receiving layer; and a source pattern connected to one of the top or bottom of the ion supply layer, and a drain pattern connected to the other one or the top or bottom of the ion supply layer. A resistance of the ion supply layer is varies depending on an amount of ions supplied from the ion supply layer to the ion-receiving layer in response to a voltage applied to the gate pattern.


Find Patent Forward Citations

Han, Jae-Hyun. (2022). Semiconductor device including variable resistance element (U.S. Patent No. 11380844). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11380844

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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