The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2022

Filed:

Apr. 10, 2018
Applicant:

Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, CN;

Inventors:

Xin Ou, Shanghai, CN;

Lixing You, Shanghai, CN;

Qi Jia, Shanghai, CN;

Weijun Zhang, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 39/08 (2006.01); H01L 39/10 (2006.01); H01L 39/12 (2006.01); H01L 39/24 (2006.01);
U.S. Cl.
CPC ...
H01L 39/10 (2013.01); H01L 39/08 (2013.01); H01L 39/125 (2013.01); H01L 39/249 (2013.01);
Abstract

The present disclosure provides a method for making a single photon detector with a modified superconducting nanowire. The method includes: preparing a substrate; modifying a superconducting nanowire with stress on a surface of the substrate; and fabricating a superconducting nanowire single photon detector based on the superconducting nanowire with stress. Based on the above technical solution, in the superconducting nanowire single photon detector provided by the present disclosure, the device material layer film has a certain thickness, the critical temperature of the device material can be reduced, the uniformity of the device material and small superconducting transition width are ensured, thereby improving the detection efficiency of the device.


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