The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2022

Filed:

May. 14, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jongin Yang, Hwaseong-si, KR;

Hankyu Seong, Seoul, KR;

Sunghyun Sim, Uiwang-si, KR;

Jihye Yeon, Suwon-si, KR;

Hanul Yoo, Bucheon-si, KR;

Jihoon Yun, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/24 (2010.01); H01L 33/50 (2010.01); H01L 33/38 (2010.01); H01L 33/44 (2010.01); H01L 33/62 (2010.01); H01L 27/15 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/24 (2013.01); H01L 27/156 (2013.01); H01L 33/385 (2013.01); H01L 33/44 (2013.01); H01L 33/502 (2013.01); H01L 33/505 (2013.01); H01L 33/62 (2013.01); H01L 33/0075 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A semiconductor light emitting device including at least one light emitting structure on a substrate, the at least one light emitting structure including a first semiconductor pattern, an active pattern, and a second semiconductor pattern sequentially stacked in a vertical direction substantially perpendicular to an upper surface of the substrate; a first electrode contacting a substrate-facing surface of the first semiconductor pattern; and a second electrode at least partially surrounding and contacting a sidewall of the second semiconductor pattern.


Find Patent Forward Citations

Loading…