The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2022
Filed:
Aug. 07, 2019
Hefei Xinsheng Optoelectronics Technology Co., Ltd., Anhui, CN;
Boe Technology Group Co., Ltd., Beijing, CN;
Tongshang Su, Beijing, CN;
Dongfang Wang, Beijing, CN;
Jun Liu, Beijing, CN;
Guangyao Li, Beijing, CN;
Wei Li, Beijing, CN;
Qinghe Wang, Beijing, CN;
Chao Wang, Beijing, CN;
Tao Sun, Beijing, CN;
HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., Hefei, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Abstract
The disclosure relates to a thin film transistor. The thin film transistor may include a substrate, an active layer on the substrate, a gate on the active layer, and a source and a drain. The active layer may include a first conducting region, a second conducting region, and a channel region between the first conducting region and the second conducting region. An orthographic projection of the source and an orthographic projection of the drain on the substrate may cover at least an orthographic projection of a first conducting region and an orthographic projection of a second conducting region on the substrate.