The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2022
Filed:
Nov. 03, 2019
Nuvoton Technology Corporation, Hsinchu, TW;
Chih-Wei Chen, Hsinchu, TW;
Wen-Ying Wen, Hsinchu, TW;
Nuvoton Technology Corporation, Hsinchu, TW;
Abstract
A high electron mobility transistor (HEMT) device and a manufacturing method thereof are provided. The HEMT device includes a channel layer, a barrier layer, a first gate electrode, a first drain electrode and a first source electrode. The channel layer is disposed on a substrate. A surface of a portion of the channel layer within a first region of the HEMT device includes a polar plane and a non-polar plane. The barrier layer is conformally disposed on the channel layer. The first gate electrode is disposed on the barrier layer, and located within the first region. The first drain electrode and the first source electrode are disposed within the first region, and located at opposite sides of the first gate electrode.