logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11380704 B1

PDFFull Text
Date of Patent:
Jul. 05, 2022

Filed:

Aug. 26, 2020

Semiconductor memory device and method of manufacturing semiconductor memory device

Applicant:

Kioxia Corporation, Minato-ku, JP;

Inventor:

Tomoya Inden, Yokkaichi, JP;

Assignee:

Kioxia Corporation, Minato-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Shahed Ahmed

Assistant Examiner:

Khatib A Rahman

Int. Cl.
CPC ...
H01L 27/1157 (2017.01); H01L 21/8238 (2006.01); H01L 29/423 (2006.01); H01L 27/11565 (2017.01); H01L 27/11582 (2017.01); H01L 29/66 (2006.01); H01L 29/792 (2006.01); H01L 27/11573 (2017.01);
U.S. Cl.
CPC ...
H01L 27/1157 (2013.01); H01L 27/11565 (2013.01); H01L 27/11573 (2013.01); H01L 27/11582 (2013.01); H01L 29/4234 (2013.01); H01L 29/66833 (2013.01); H01L 29/792 (2013.01);
Abstract

A semiconductor memory device includes a P-type transistor and a first N-type transistor. The P-type transistor includes a first semiconductor layer containing carbon, a P-type second semiconductor layer provided on the first semiconductor layer, a third semiconductor layer provided on the second semiconductor layer and containing carbon. The first N-type transistor includes a fourth semiconductor layer containing carbon, an N-type fifth semiconductor layer provided on the fourth semiconductor layer, a sixth semiconductor layer provided on the fifth semiconductor layer and containing carbon.

Find Patent Forward Citations

Inden, Tomoya. (2022). Semiconductor memory device and method of manufacturing semiconductor memory device (U.S. Patent No. 11380704). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11380704

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…