The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2022
Filed:
Apr. 08, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A vertical memory device includes lower circuit patterns, a second substrate, a capacitor, gate electrodes, and a channel. The lower circuit patterns are formed on a first substrate including first, second and third regions. Contact plugs are formed in the second region. Through vias are formed in the third region. The second substrate is formed on the lower circuit patterns. The capacitor is formed on the lower circuit patterns, and includes a first conductor, a dielectric layer structure, and a second conductor. The first conductor is spaced apart from the second substrate at the same height as the second substrate. The dielectric layer structure is formed on the first conductor. The second conductor is formed on the dielectric layer structure. The gate electrodes are spaced apart from each other on the second substrate in a vertical direction. The channel extends through the gate electrodes in the vertical direction.