The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2022

Filed:

May. 20, 2020
Applicant:

Semtech Corporation, Camarillo, CA (US);

Inventors:

David J. Rose, Camarillo, CA (US);

William A. Russell, Thousand Oaks, CA (US);

Jonathan Clark, Camarillo, CA (US);

Assignee:

Semtech Corporation, Camarillo, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H02H 9/04 (2006.01); H01L 29/861 (2006.01); H01C 7/12 (2006.01); H01L 23/62 (2006.01); H02H 9/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0266 (2013.01); H01C 7/12 (2013.01); H01L 23/62 (2013.01); H01L 27/0255 (2013.01); H01L 29/861 (2013.01); H02H 9/025 (2013.01); H02H 9/041 (2013.01); H02H 9/046 (2013.01);
Abstract

A semiconductor device is protected from electrical overstress (EOS) and electro-static discharge (ESD) events by a series protection circuit electrically coupled in series along the transmission line between a signal source and a load. The series protection circuit includes a first field-effect transistor (FET) electrically coupled in series between the signal source and load. A parallel protection circuit is electrically coupled between the transmission line and a ground node. The parallel protection circuit can include a transient-voltage-suppression (TVS) diode.


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