The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2022
Filed:
May. 28, 2018
Applicant:
Teknologian Tutkimuskeskus Vtt Oy, Espoo, FI;
Inventors:
Heikki Viljanen, VTT, FI;
Pekka Rantakari, VTT, FI;
Tauno Vähä-Heikkilä, VTT, FI;
Esa Tuovinen, VTT, FI;
Assignee:
Teknologian tutkimuskeskus VTT Oy, Espoo, FI;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 49/02 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3171 (2013.01); H01L 23/291 (2013.01); H01L 28/10 (2013.01); H01L 28/20 (2013.01); H01L 28/60 (2013.01); H01L 21/0228 (2013.01); H01L 21/02178 (2013.01); H01L 21/02274 (2013.01);
Abstract
A semiconductor apparatus having a silicon substrate layer at least portion of which is doped with dopants of a conductivity type; and at least one insulator layer formed above the silicon substrate layer, wherein the at least one insulator layer and the dopants of the silicon substrate layer have opposite electric charges.