The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2022
Filed:
Apr. 20, 2015
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Ryuji Ueno, Tokyo, JP;
Masatoshi Sunamoto, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 21/02 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 21/02019 (2013.01); B82Y 40/00 (2013.01); H01L 21/02068 (2013.01);
Abstract
A semiconductor device manufacturing method includes thinning a wafer to form a wafer having an annular protruding portion on a peripheral portion thereof by grinding a central portion of a back surface of the wafer and then performing wet etching on the back surface of the wafer, forming a backside electrode on the back surface of the wafer, performing plating to evenly form a metal film on a portion of the backside electrode on the annular protruding portion, attaching a dicing tape to the metal film, and dicing the wafer having the dicing tape attached thereto.