The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2022

Filed:

Feb. 14, 2019
Applicant:

Hitachi High-tech Corporation, Tokyo, JP;

Inventors:

Yoshihide Yamaguchi, Tokyo, JP;

Sumiko Fujisaki, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); C23F 1/12 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32449 (2013.01); C23F 1/12 (2013.01); H01J 2237/3341 (2013.01);
Abstract

Provided is a semiconductor manufacturing apparatus that can etch a metal film containing a transition metal element at high speed and with high accuracy by using a complexing gas. The semiconductor manufacturing apparatus includes: a vacuum container; a processing chamberthat is provided in the vacuum container, and includes a stageon which a sampleformed with a metal film containing a transition metal element is placed; and a vaporization chamberthat is provided in the vacuum container, and includes a vaporizing nozzle unitconfigured to vaporize a complexing gas raw material liquid supplied from an outside. A complexing gas obtained by vaporizing the complexing gas raw material liquid is introduced into the processing chamber to etch the metal film of the sample.


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Yamaguchi, Yoshihide. (2022). Semiconductor manufacturing apparatus (U.S. Patent No. 11380523). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11380523

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