The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2022

Filed:

Mar. 15, 2021
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Nayuta Kariya, Yokkaichi, JP;

Muneyuki Tsuda, Ichinomiya, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/10 (2006.01); H01L 23/522 (2006.01); H01L 27/11556 (2017.01); G11C 16/26 (2006.01); G11C 16/04 (2006.01); G11C 16/14 (2006.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 16/0483 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01); H01L 23/5226 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01);
Abstract

A semiconductor memory device includes first conductive layers, second conductive layers, a semiconductor layer disposed between the first conductive layers and the second conductive layers, and a charge storage layer including a first part disposed between the first conductive layers and the semiconductor layer and a second part disposed between the second conductive layers and the semiconductor layer. This semiconductor memory device is configured to execute a first write operation in which a first program voltage is supplied to a third conductive layer which is one of the first conductive layers and a write pass voltage is supplied to a fourth conductive layer which is another of the first conductive layers, and a second write operation in which a second program voltage is supplied to the third conductive layer and to the fourth conductive layer.


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