The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2022

Filed:

Jan. 13, 2021
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Ting-Shuo Hsu, New Taipei, TW;

Chih-Wei Shen, Yunlin County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/4074 (2006.01); G11C 11/4093 (2006.01); G11C 11/4096 (2006.01); G11C 5/06 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4074 (2013.01); G11C 5/06 (2013.01); G11C 11/4093 (2013.01); G11C 11/4096 (2013.01);
Abstract

A memory device includes an input pad, a first rank, a second rank, a first voltage detector, and a second voltage detector. The input pad is configured to receive an input voltage. The first voltage detector is coupled to the input pad, the first voltage detector is configured to receive the input voltage, and the first voltage detector is configured to transmit the input voltage to the first rank. The second voltage detector is coupled to the first voltage detector through a first through-silicon via, the second voltage detector is configured to receive the input voltage, and the second voltage detector is configured to transmit the input voltage to the second rank according to a control signal transmitted from the first voltage detector through the first voltage detector, so as to decide a state of the second rank.


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