The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2022

Filed:

Apr. 02, 2020
Applicants:

Beijing Boe Optoelectronics Technology Co., Ltd., Beijing, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Xiaojuan Wu, Beijing, CN;

Xuan Zhong, Beijing, CN;

Hongliang Yuan, Beijing, CN;

Qi Zheng, Beijing, CN;

Zhangxiang Cheng, Beijing, CN;

Yao Bi, Beijing, CN;

Zhiqiang Zhao, Beijing, CN;

Jiaxing Wang, Beijing, CN;

Donghua Zhang, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1368 (2006.01); G02F 1/1362 (2006.01);
U.S. Cl.
CPC ...
G02F 1/13624 (2013.01); G02F 1/1368 (2013.01); G02F 1/136286 (2013.01);
Abstract

The present disclosure provides a sub-pixel structure, a liquid crystal panel and a reflective liquid crystal display device. The sub-pixel structure includes a pixel electrode, and a first thin film transistor and a second thin film transistor integrated on an array substrate; the first thin film transistor and the second thin film transistor are respectively close to a first side and a second side, opposite to each other, of the pixel electrode, and are adjacent to and are connected to two scanning lines in the array substrate, respectively; and a length of a channel region of the first thin film transistor is greater than a first length threshold, and a length of a channel region of the second thin film transistor is greater than a second length threshold.


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