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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11376703 B1

PDFFull Text
Date of Patent:
Jul. 05, 2022

Filed:

Jun. 29, 2018

Indium phosphide (inp) wafer having pits of olive-shape on the back side, method and etching solution for manufacturing the same

Applicant:

Beijing Tongmei Xtal Technology Co., Ltd., Beijing, CN;

Inventors:

Liugang Wang, Beijing, CN;

Haimiao Li, Beijing, CN;

Sung-Nee George Chu, Fremont, CA (US);

Assignee:

BEIJING TONGMEI XTAL TECHNOLOGY CO., LTD.;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

Syed I Gheyas

Int. Cl.
CPC ...
B24B 7/22 (2006.01); C09K 13/00 (2006.01); C09K 13/04 (2006.01); C30B 29/40 (2006.01); C30B 33/10 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 29/20 (2006.01); H01L 29/34 (2006.01); H01L 31/0236 (2006.01); H01L 31/0304 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
B24B 7/228 (2013.01); C09K 13/00 (2013.01); C09K 13/04 (2013.01); C30B 29/40 (2013.01); C30B 33/10 (2013.01); H01L 21/02019 (2013.01); H01L 29/045 (2013.01); H01L 29/20 (2013.01); H01L 29/34 (2013.01); H01L 31/02363 (2013.01); H01L 31/0304 (2013.01); H01L 31/184 (2013.01);
Abstract

A {100} indium phosphide (InP) wafer has multiplies of olive-shaped etch pits on the back side surface of the wafer, wherein the olive shape refers to a shape with its both ends being narrow and its middle being wide, e.g., an oval shape. A method of manufacturing the {100} indium phosphide wafer comprises: etching the wafer by immersing it into an etching solution to produce etch pits; washing the wafer with deionized water; protecting the back side surface of the wafer; mechanical polishing and chemical polishing the front side surface of the wafer, and then washing it with deionized water; de-protecting the back side surface of the wafer; wherein the etching solution comprises an acidic substance, deionized water and an oxidizing agent. The wafer can be heated uniformly during the epitaxial growth and thus displays good application effect.

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