The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2022

Filed:

Aug. 19, 2020
Applicant:

Sungrow (Shanghai) Co., Ltd., Shanghai, CN;

Inventor:

Peng Zhang, Shanghai, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 7/122 (2006.01); H02H 9/04 (2006.01); H02M 1/34 (2007.01); H02M 7/5387 (2007.01);
U.S. Cl.
CPC ...
H02H 9/042 (2013.01); H02H 7/1225 (2013.01); H02H 9/044 (2013.01); H02M 1/34 (2013.01); H02M 7/5387 (2013.01); H02M 1/344 (2021.05);
Abstract

An overvoltage absorption circuit and a single-phase HERIC topology are provided. The overvoltage absorption circuit is applicable to the single-phase HERIC topology, and includes a clamping capacitor, an absorption resistor, a first diode, and a second diode. One terminal of the clamping capacitor and one terminal of the absorption resistor are each connected to collectors of two cross transistors in the single-phase HERIC topology. The other terminal of the clamping capacitor and the other terminal of the absorption resistor are each connected to the anodes of the first diode and the second diode. The cathode of the first diode is connected to the emitter of one of the two cross transistors. The cathode of the second diode is connected to the emitter of the other of the two cross transistors.


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