The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2022
Filed:
May. 15, 2020
Applicant:
Epistar Corporation, Hsinchu, TW;
Inventors:
Meng-Yang Chen, Hsinchu, TW;
Yuan-Ting Lin, Hsinchu, TW;
Assignee:
EPISTAR CORPORATION, Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/04 (2010.01); H01L 33/62 (2010.01); H01L 33/30 (2010.01); H01L 33/10 (2010.01);
U.S. Cl.
CPC ...
H01L 33/002 (2013.01); H01L 33/04 (2013.01); H01L 33/10 (2013.01); H01L 33/305 (2013.01); H01L 33/62 (2013.01);
Abstract
A semiconductor device is provided, which includes an active structure and a first semiconductor layer. The active structure includes an active region having a topmost surface and a bottommost surface, and a first dopant distributing from the topmost surface to the bottommost surface. The first semiconductor layer is located under the active structure and includes a second dopant. The active region includes a semiconductor material including As.