The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2022

Filed:

Dec. 05, 2019
Applicants:

Sunpower Corporation, San Jose, CA (US);

Total Marketing Services, Puteaux, FR;

Inventors:

Yu-Chen Shen, Sunnyvale, CA (US);

Périne Jaffrennou, Mountain View, CA (US);

Gilles Olav Tanguy Sylvain Poulain, Palaiseau, FR;

Michael C. Johnson, Alameda, CA (US);

Seung Bum Rim, Palo Alto, CA (US);

Assignees:

SunPower Corporation, San Jose, CA (US);

Total Marketing Services, Puteaux, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0216 (2014.01); H01L 31/0236 (2006.01); H01L 31/068 (2012.01); H01L 31/0747 (2012.01);
U.S. Cl.
CPC ...
H01L 31/1864 (2013.01); H01L 31/02167 (2013.01); H01L 31/02363 (2013.01); H01L 31/068 (2013.01); H01L 31/0747 (2013.01); H01L 31/186 (2013.01); Y02E 10/547 (2013.01);
Abstract

Methods of fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a passivating dielectric layer on a light-receiving surface of a silicon substrate. The method also includes forming an anti-reflective coating (ARC) layer below the passivating dielectric layer. The method also includes exposing the ARC layer to ultra-violet (UV) radiation. The method also includes, subsequent to exposing the ARC layer to ultra-violet (UV) radiation, thermally annealing the ARC layer.


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